IL352 document number 83624 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179027 c a 1 2 3 4 5 6 7 8 n.c n.c c b e pb p b -free e3 optocoupler, phototransistor output, with base connection features ? good ctr linearly depending on forward current isolation test voltage, 3000 v rms high collector-emitter voltage, v ceo = 30 v low saturation voltage fast switching times lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code s din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 description the IL352 optically coupled isolator that features a high current transfer ratio, low coupling capacitance and high isolation voltage. it has a gaas infrared emitting diode emitter, whic h is optically coupled to a silicon planar photo transistor detector. the compo- nent is housed in a thin line package. the coupling device is designed for signal transmis- sion between two electrically separated circuits. the potential difference between the circuits to be coupled must not exceed the maximum permissible reference voltages. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks IL352 ctr > 100 %, smd-8 parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma total power dissipation p diss 50 mw derate linearly from 25 c 0.66 mw/c
www.vishay.com 2 document number 83624 rev. 1.5, 26-oct-04 IL352 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit collector-emitter voltage v ce 70 v emitter-base voltage v ebo 7.0 v collector current i c 50 ma t 1.0 ms i c 100 ma total power dissipation p diss 150 mw derate linearly from 25 c 2.5 mw/c parameter test condition symbol value unit isolation test voltage (between emitter and detector referred to climate din 40046, part 2, nov. 74) t = 1.0 sec. v iso 3000 v rms isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 40 to + 150 c ambient temperature range t amb - 40 to + 85 c junction temperature t j 100 c soldering temperature max 10 s, dip soldering distance to seating plane 1.5 mm t sld 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.3 1.5 v reverse current v r = 6.0 v i r 0.1 10 a capacitance v r = 0, f = 1.0 mhz c o 25 pf parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 ma, i e = 100 abv ceo 30 v emitter-collector breakdown voltage i c = 1.0 ma, i e = 100 abv eco 7.0 v collector-emitter leakage current v ce = 10 v, i f = 0, t a = 25 c i ceo 5.0 50 na v ce = 30 v, i f = 0, t a = 85 c i ceo 500 a collector-base breakdown voltage i c = 100 abv cbo 70 v collector-emitter capacitance v ce = 0 c ce 6.0 pf
IL352 document number 83624 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio switching characteristics typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit saturation voltage collector- emitter i f = 10 ma, i c = 0.5 ma v cesat 0.3 v collector-emitter capacitance v ce = 0 c ce 6.0 pf capacitance (input-output) f = 1.0 mhz c io 0.5 pf parameter test condition symbol min ty p. max unit dc current transfer ratio i f = 10 ma, v ce = 10 v ctr dc 100 % i f = 1.0 ma, v ce = 10 v ctr dc 34 % parameter test condition symbol min ty p. max unit switching time, non-saturated i c = 2.0 ma, r e = 100 ? , v cc = 10 v, rh 50 % t on , t off 10 s figure 1. switching waveform iIL352_01 t d t r 50% phl t plh t s t f t i f v o fi 2.sitismti iIL352_02 f = 10 khz, d f = 50% i f =2ma v cc =10v r e = 100 ? v o
www.vishay.com 4 document number 83624 rev. 1.5, 26-oct-04 IL352 vishay semiconductors figure 3. forward voltage vs. forward current figure 4. normalized non-satura ted and saturated ctr vs. led current figure 5. normalized non-saturated and saturated ctr vs. led current iIL352_03 if - forward current - ma 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1. 3 1.4 vf - forward voltage - v ta = C55c ta = 25c ta = 85c iIL352_04 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v iIL352_05 100 10 1 .1 0.0 0.5 1.0 1.5 nctr(sat) nctr i f - led current - ma nctr - normalized ctr normalized to: v ce =10v,i f = 10 ma, t a = 25c t a = 50c ctrce(sat) v ce = 0.4 v figure 6. normalized non-saturated and saturated ctr vs. led current figure 7. normalized non-saturated and saturated ctr vs. led current figure 8. collector-emitter current vs. temperature and led current iIL352_06 100 10 1 .1 0.0 0.5 1.0 1.5 i f - led current - ma nctr(sat) nctr normalized to: v ce =10v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v t a = 70c nctr - normalized ctr iIL352_07 .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr nctr(sat) nctr normalized to: v ce =10v , i f =10ma, t a = 25c ctrce(sat) v ce = 0.4 v t a = 85c iIL352_08 60 50 30 20 10 0 0 5 10 15 20 25 30 35 50c 70c 85c i f - led current - ma i ce - collector current - ma 25c 40
IL352 document number 83624 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 9. collector-emitter leakage current vs.temp. figure 10. normalized ctr cb vs. led current and temperature figure 11. collector-base p hotocurrent vs. led current iIL352_09 100 80 60 40 20 0 -20 t a - ambient temperature - c i ceo - collector-emitter - na typical v ce =10v 10 5 10 4 10 3 10 2 10 1 10 0 10 -1 10 -2 iIL352_10 .1 1 1 0 100 0.0 0.5 1.0 1.5 25c 50c 70c i f - led current - ma nctr cb - normalized ctr cb normalized to: i f =10 ma v cb =9.3v t a = 25c iIL352_11 100 10 1 .1 .01 .1 1 10 100 1000 i f - led current - ma i cb - collector base photocurrent - a i cb = 1.0357 *if ^1.3631 t a = 25c figure 12. normalized photocurrent vs. i f and temp. figure 13. propagation delay vs. collector load resistor iIL352_12 .1 1 10 100 10 1 .1 .01 i f - led current - ma normalized photocurrent normalized to: i f = 10 ma, t a = 25c nib- t a = -20c nib, t a = 25c nib, t a = 50c nib, t a = 70c iIL352_13 r l - collector load resistor - k ? 100 10 1 .1 1 10 100 1000 1.0 1.5 2.0 2.5 tplh tphl tplh - propagation delay s tphl - propagation delay s t a = 25c, i f =10ma v cc = 5 v, vth = 1.5 v
www.vishay.com 6 document number 83624 rev. 1.5, 26-oct-04 IL352 vishay semiconductors package dimensions in inches (mm) i178011 .346 (8.79) .326 (8.3) .224 (5.7) .216 (5.5) .230 (5.84) .224 (5.69) .091 (2.3) .083 (2.1) .016 (.41) typ. .050 (1.27) typ. .040 (1.02) .036 (.91) 40 3C7 .047 (1.19) .037 (.94) .017 (.43) .013 (.33) 10 typ. all 8 sides .006 (.15) pins 6&7 .301 (7.65) .281 (7.14) iso method a r .010(.25) .086 (2.18) .050 (1.27) .036 (.91) .014 (.36) .266 (6.76) .045 (1.14) .356 (9.04)
IL352 document number 83624 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
|
